S-d exchange interaction in GaN:Mn studied by electron paramagnetic resonance

被引：12
作者：
Wolos, A
Palczewska, M
Wilamowski, Z
Kaminska, M
Twardowski, A
Bockowski, M
Grzegory, I
Porowski, S
机构：
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 26期
关键词：
D O I：
10.1063/1.1637451
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present the electron paramagnetic resonance investigations of GaN:Mn bulk crystals. The performed measurements revealed the Korringa scattering as the dominant spin relaxation mechanism in the investigated highly n-type GaN:Mn samples. The temperature dependence of the spin relaxation time determines the effective s-d exchange constant for such crystals {N(0)alpha}=14 meV. Weak exchange interaction between Mn2+ and GaN band electrons excludes carrier mediation as an origin of high-temperature ferromagnetism in n-type GaMnN. (C) 2003 American Institute of Physics.
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页码：5428 / 5430
页数：3
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