Formation of nanosize structures on a silicon substrate by method of focused ion beams

被引：15

作者：

Ageev, O. A. ^{[1
]}

Kolomiytsev, A. S. ^{[1
]}

Konoplev, B. G. ^{[1
]}

机构：

[1] So Fed Univ, Inst Technol, Taganrog, Russia

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 13期

关键词：

Nanosize Structure; Lateral Etching; Lateral Etching Rate; Transaction File; Gaussian Radial Distribution;

D O I：

10.1134/S1063782611130021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of experimental studies of modes in which nanosize structures are formed on a silicon substrate by method of focused ion beams are presented. Dependences of the diameter and depth of the nanosize structures on the ion beam current and time of exposure to the ion beam at a point are obtained. It is demonstrated that the main factor determining the rate of ion-beam milling is the ion beam current. The results of the study can be used in the development of technological processes for the fabrication of components for nanoelectronics and nanosystems engineering.

引用

页码：1709 / 1712

页数：4

共 6 条

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