Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiOx passivated rear emitter

This paper reports on the effect of screen printed metallization on the passivation quality of a boron doped poly-Si/SiOx passivated contact (PC) structure composed of a very thin Si oxide (similar to 15 angstrom) capped with boron doped poly-Si. Our boron doped poly-Si/SiOx passivated contact (p-Poly Si/SiOx PC) with a SiNx capping layer gave excellent surface passivation with a very low saturation current density of similar to 5 fA/cm(2). After screen printed metallization on poly-Si with a metal coverage of similar to 10%, this value increased to similar to 17 fA/cm(2). This paper also demonstrates the fabrication of screen printed, large area (239 cm(2)), high efficiency (similar to 21%) n-base bifacial back junction Si solar cells with p-Poly-Si/SiOx PC on the rear and a phosphorus implanted n(++)-n(+) selective front surface field. Detailed analysis is performed to quantify recombination and extract the saturation current density contributions (J(0)) from each layer of the cell including the metallized front surface field and the tunnel oxide passivated contact. Finally, 2D device modeling of this back junction cell is performed by implementing a simple approach which replaces the p-Poly-Si/SiOx PC by an equivalent p-n junction with the same J(0) and gives a good match between the measured and simulated cell parameters using the extracted J(0) and recombination velocity values. Published by AIP Publishing.