Low-Temperature Data Remanence Attacks Against Intrinsic SRAM PUFs

被引：22

作者：

Anagnostopoulos, N. A. ^{[1
]}

Arul, T. ^{[1
]}

Rosenstihl, M. ^{[2
]}

Schaller, A. ^{[1
]}

Gabmeyer, S. ^{[1
]}

Katzenbeisser, S. ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Comp Sci Dept, Darmstadt, Germany

[2] Tech Univ Darmstadt, Inst Solid State Phys, Darmstadt, Germany

来源：

2018 21ST EUROMICRO CONFERENCE ON DIGITAL SYSTEM DESIGN (DSD 2018) | 2018年

关键词：

Physical Unclonable Function (PUF); Static Random Access Memory (SRAM); data remanence; data retention; low temperature; attack;

D O I：

10.1109/DSD.2018.00102

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

In this work, we present the first systematic study of data remanence effects on an intrinsic Static Random Access Memory Physical Unclonable Function (SRAM PUF) implemented on a commercial off-the-shelf (COTS) device in the temperature range between -110 degrees Celsius and -40 degrees Celsius. Based on our experimental results, we propose a new type of attack against intrinsic SRAM PUFs, which takes advantage of data remanence effects exhibited due to low temperatures. We demonstrate that this attack is highly resistant to memory erasure techniques and can be used to manipulate the cryptographic keys produced by the SRAM PUF. Finally, we also discuss and assess potential countermeasures against the attack we propose.

引用

页码：581 / 585

页数：5

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