Manipulation of Magnetic Properties and Magnetoresistance in Co/Cu/γ′-Fe4N/Mica Flexible Spin Valves via External Mechanical Strains

被引:1
作者
Chen, Xia [1 ]
Shi, Xiaohui [1 ,2 ]
Zhang, Zeyu [1 ]
Liu, Xiang [1 ,3 ]
Jin, Chao [1 ]
Mi, Wenbo [1 ]
机构
[1] Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300354, Peoples R China
[2] Linyi Univ, Sch Phys & Elect Engn, Linyi 276000, Shandong, Peoples R China
[3] Civil Aviat Univ China, Coll Sci, Tianjin 300300, Peoples R China
基金
中国国家自然科学基金;
关键词
flexible spintronics; gamma '-Fe4N-based flexible spintronic devices; magnetic properties; magnetoresistance; bending strains; GIANT MAGNETORESISTANCE; DEPENDENT TRANSPORT; SENSING ELEMENTS; SPACER THICKNESS; THIN-FILMS;
D O I
10.1021/acsaelm.1c00999
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The strain-tailored magnetic and electronic transport properties in flexible spin valves (SPVs) have attracted attention due to their practical applications in flexible spintronic devices. Here, magnetic and spin-dependent electronic transport properties of Co/Cu/gamma'-Fe4N/mica flexible SPVs are investigated. The strain-induced change ratio of magnetoresistance (MR) is 49% in Co(4.8 nm)/Cu(7.5 nm)/gamma'-Fe4N(11.0 nm) flexible SPVs. The magnetic properties of Co(4.8 nm)/Cu(7.5 nm)/gamma'-Fe4N(7.9 nm) flexible SPVs show mechanical stability at bending strains. The magnetic properties of flexible SPVs did not deteriorate after 100 times of bending and 60 h of bending. As the Co layer thickness decreases from 7.2 to 2.4 nm, the sign of MR changes from negative to positive. A negative MR appears due to the opposite scattering spin asymmetry coefficients between Co/Cu and gamma'-Fe4N/Cu interfaces. A positive MR arises from the same scattering spin asymmetry coefficients at Co/Cu and gamma'-Fe4N/Cu interfaces or magnetization misalignments between Co and gamma'-Fe4N layers. Additionally, the MR is a combination of an anisotropy magnetoresistance and a giant magnetoresistance effect, which has been confirmed by MR-H curves with different measurement configurations (Hin-plane parallel to I, Hin-plane perpendicular to I and Hout-of-plane perpendicular to I) and M-H curves. The M-H curves show that the magnetization of gamma'-Fe4N reverses before that of the Co layer.
引用
收藏
页码:276 / 286
页数:11
相关论文
共 72 条
[1]  
Adjanoh, 2018, J MAT PHYS CHEM, V6, P39
[2]   Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures [J].
Albarakati, Sultan ;
Tan, Cheng ;
Chen, Zhong-Jia ;
Partridge, James G. ;
Zheng, Guolin ;
Farrar, Lawrence ;
Mayes, Edwin L. H. ;
Field, Matthew R. ;
Lee, Changgu ;
Wang, Yihao ;
Xiong, Yiming ;
Tian, Mingliang ;
Xiang, Feixiang ;
Hamilton, Alex R. ;
Tretiakov, Oleg A. ;
Culcer, Dimitrie ;
Zhao, Yu-Jun ;
Wang, Lan .
SCIENCE ADVANCES, 2019, 5 (07)
[3]   Pseudo spin-valve on plastic substrate as sensing elements of mechanical strain [J].
Anwarzai, B. ;
Ac, V. ;
Luby, S. ;
Majkova, E. ;
Senderak, R. .
VACUUM, 2009, 84 (01) :108-110
[4]   Magnetoresistance in Co-hBN-NiFe Tunnel Junctions Enhanced by Resonant Tunneling through Single Defects in Ultrathin hBN Barriers [J].
Asshoff, Pablo U. ;
Sambricio, Jose L. ;
Slizovskiy, Sergey ;
Rooney, Aidan P. ;
Taniguchi, Takashi ;
Watanabe, Kenji ;
Haigh, Sarah J. ;
Fal'ko, Vladimir ;
Grigorieva, Irina V. ;
Vera-Marun, Ivan J. .
NANO LETTERS, 2018, 18 (11) :6954-6960
[5]   Magnetosensitive e-skins with directional perception for augmented reality [J].
Bermudez, Gilbert Santiago Canon ;
Karnaushenko, Dmitriy D. ;
Karnaushenko, Daniil ;
Lebanov, Ana ;
Bischoff, Lothar ;
Kaltenbrunner, Martin ;
Fassbender, Juergen ;
Schmidt, Oliver G. ;
Makarov, Denys .
SCIENCE ADVANCES, 2018, 4 (01)
[6]   High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications [J].
Chen, Jun-Yang ;
Lau, Yong-Chang ;
Coey, J. M. D. ;
Li, Mo ;
Wang, Jian-Ping .
SCIENTIFIC REPORTS, 2017, 7
[7]  
Choi S. J., 1997, J MAGN, V2, P7
[8]   Nature of coupling and origin of coercivity in giant magnetoresistance NiO-Co-Cu-based spin valves [J].
Chopra, HD ;
Yang, DX ;
Chen, PJ ;
Parks, DC ;
Egelhoff, WF .
PHYSICAL REVIEW B, 2000, 61 (14) :9642-9652
[9]   Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide [J].
Dankert, Andre ;
Pashaei, Parham ;
Kamalakar, M. Venkata ;
Gaur, Anand P. S. ;
Sahoo, Satyaprakash ;
Rungger, Ivan ;
Narayan, Awadhesh ;
Dolui, Kapildeb ;
Hoque, Md. Anamul ;
Patel, Ram Shanker ;
de Jong, Michel P. ;
Katiyar, Ram S. ;
Sanvito, Stefano ;
Dash, Saroj P. .
ACS NANO, 2017, 11 (06) :6389-6395
[10]   Interface roughness effects on coercivity and exchange bias -: art. no. 10K105 [J].
Dantas, AL ;
Rebouças, GOG ;
Silva, ASWT ;
Carriço, AS .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)