Paramagnetic Pb-type interface defects in thermal (110)Si/SiO2

被引：4

作者：

Keunen, K. ^{[1
]}

Stesmans, A.

Afanas'ev, V. V.

机构：

[1] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 21期

关键词：

ELECTRON-SPIN-RESONANCE; OXIDIZED SILICON; (111)SI/SIO2 INTERFACE; SI/SIO2; INTERFACE; DENSITY; ORIENTATION; CENTERS; STATES;

D O I：

10.1063/1.3590271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A multifrequency electron spin resonance (ESR) study on thermal (110)Si/SiO2 as a function of oxidation temperature T-ox(200-1125 degrees C) reveals an unexpectedly high density of P-b-type interface centers, which variant, based on pertinent ESR properties, is typified as P-b0((110)). In terms of P-b(0) center density, the (110) face is found to be the worst of all three low index Si interfaces, i.e., [P-b0((100))]<[P-b((111))]<[P-b0((110))], over the range T-ox < similar to 900 degrees C. Unlike previous belief, the density of prevailing P-b(0) centers over the low index Si/SiO2 interfaces is not found to scale with Si surface areal atom density nor available Si bond density; an alternative criterion is suggested. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3590271]

引用

页数：3

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