Infrared response of heavily doped p-type si and SiGe alloys from ellipsometric measurements

被引：0
|
作者：
Humlícek, J [1 ]
Krápek, V [1 ]
机构：
[1] Masaryk Univ, Fac Sci, Inst Condensed Matter Phys, CZ-61137 Brno, Czech Republic
来源：
Physics of Semiconductors, Pts A and B | 2005年 / 772卷
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report here ellipsometric spectra of Si and SiGe alloys heavily doped with boron. In the mid-infrared range, the response can be separated into the contributions of free-hole plasma and direct intervalence transitions. The first contribution extrapolates correctly to the zero-frequency resistance, the second is in a good agreement with the 8-band k.p calculation.
引用
收藏
页码：113 / 114
页数：2
相关论文
共 50 条
  • [41] Piezoresistive Properties of Heavily Doped P-type Polysilicon Films
    Lu, Xuebin
    Liu, Xiaowei
    Chuai, Rongyan
    Shi, Changzhi
    Huo, Mingxue
    Chen, Weiping
    2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2, 2009, : 498 - +
  • [42] ELECTRICAL-CONDUCTIVITY OF HEAVILY DOPED P-TYPE DIAMOND
    VISHNEVSKII, AS
    GONTAR, AG
    TORISHNII, VI
    SHULZHENKO, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06): : 659 - 661
  • [43] RECTIFICATION IN HEAVILY DOPED P-TYPE GAAS/ALAS HETEROJUNCTIONS
    YOFFE, GW
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) : 1081 - 1083
  • [44] INTRINSIC DENSITY OF CARRIERS IN HEAVILY DOPED P-TYPE GERMANIUM
    BRYKSIN, VA
    ZEMSKOV, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (04): : 670 - &
  • [45] RADIATIVE RECOMBINATION IN LIGHTLY AND HEAVILY DOPED P-TYPE GAAS
    NASLEDOV, DN
    NEGRESKU.VV
    TSARENKO.BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08): : 1012 - +
  • [46] THERMOELECTRIC POWER OF HEAVILY DOPED P-TYPE GASB CRYSTALS
    BURDIYAN, II
    SKRIPKIN, VA
    EMELYANE.OV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1896 - &
  • [47] N- and p-type SiGe/Si superlattice coolers
    Fan, XF
    Zeng, GH
    Croke, E
    Robinson, G
    LaBounty, C
    Shakouri, A
    Bowers, JE
    ITHERM 2000: SEVENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS, VOL I, PROCEEDINGS, 2000, : 304 - 307
  • [48] N- and p-type SiGe/Si superlattice coolers
    Fan, Xiaofeng
    Zeng, Gehong
    Croke, Edward
    Robinson, Gerry
    LaBounty, Chris
    Shakouri, Ali
    Bowers, John E.
    Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference, 2000, 1 : 304 - 307
  • [49] N- and P-type Si/SiGe hetero FETs
    König, U
    8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2000, : 1 - 7
  • [50] Energy band design for p-type tensile strained Si/SiGe quantum well infrared photodetectors
    Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
    不详
    Pan Tao Ti Hsueh Pao, 2008, 4 (785-788):
12345