Infrared response of heavily doped p-type si and SiGe alloys from ellipsometric measurements

被引：0
|
作者：
Humlícek, J [1 ]
Krápek, V [1 ]
机构：
[1] Masaryk Univ, Fac Sci, Inst Condensed Matter Phys, CZ-61137 Brno, Czech Republic
来源：
Physics of Semiconductors, Pts A and B | 2005年 / 772卷
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report here ellipsometric spectra of Si and SiGe alloys heavily doped with boron. In the mid-infrared range, the response can be separated into the contributions of free-hole plasma and direct intervalence transitions. The first contribution extrapolates correctly to the zero-frequency resistance, the second is in a good agreement with the 8-band k.p calculation.
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页码：113 / 114
页数：2
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