Magnetoexcitons in type-II quantum dots

被引：45
|
作者：
Kalameitsev, AB [1 ]
Kovalev, VM
Govorov, AO
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Univ Munich, Ctr Nanosci, D-80539 Munich, Germany
[3] Univ Munich, Sekt Phys, D-80539 Munich, Germany
来源：
JETP LETTERS | 1998年 / 68卷 / 08期
关键词：
D O I：
10.1134/1.567926
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The ground state of a spatially indirect exciton in type-II quantum dots with a short-range potential acquires nonzero angular momentum in the presence of a magnetic field oriented perpendicular to the plane of the system. The critical magnetic field of the transition to a ground state with nonzero angular momentum depends on the radius of the quantum dot. Such a transition can be observed as quenching of luminescence by a magnetic field in quantum dots of the GaSb/GaAs system, for example. (C) 1998 American Institute of Physics. [S0021-3640(98)00820-2].
引用
收藏
页码：669 / 672
页数：4
相关论文
共 50 条
  • [21] Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots
    Lin, TY
    Lyu, DY
    Chang, J
    Shen, JL
    Chou, WC
    APPLIED PHYSICS LETTERS, 2006, 88 (12)
  • [22] Excitons in charged Ge/Si type-II quantum dots
    Yakimov, AI
    Stepina, NP
    Dvurechenskii, AV
    Nikiforov, AI
    Nenashev, AV
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (12) : 1125 - 1130
  • [23] Excitonic fine structure splitting in type-II quantum dots
    Krapek, V.
    Klenovsky, P.
    Sikola, T.
    PHYSICAL REVIEW B, 2015, 92 (19):
  • [24] Type-II quantum dots in magnetic fields: excitonic behaviour
    Janssens, KL
    Partoens, B
    Peeters, FM
    MICROELECTRONICS JOURNAL, 2003, 34 (5-8) : 347 - 350
  • [25] RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS
    HATAMI, F
    LEDENTSOV, NN
    GRUNDMANN, M
    BOHRER, J
    HEINRICHSDORFF, F
    BEER, M
    BIMBERG, D
    RUVIMOV, SS
    WERNER, P
    GOSELE, U
    HEYDENREICH, J
    RICHTER, U
    IVANOV, SV
    MELTSER, BY
    KOPEV, PS
    ALFEROV, ZI
    APPLIED PHYSICS LETTERS, 1995, 67 (05) : 656 - 658
  • [26] Coulomb effects in type-II Ga(As)Sb quantum dots
    Gradkowski, Kamil
    Ochalski, Tomasz J.
    Williams, David P.
    Healy, Sorcha B.
    Tatebayashi, Jun
    Balakrishnan, Ganesh
    O'Reilly, Eoin P.
    Huyet, Guillaume
    Huffaker, Diana L.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (04): : 752 - 755
  • [27] Polarization anisotropy of the emission from type-II quantum dots
    Klenovsky, P.
    Hemzal, D.
    Steindl, P.
    Zikova, M.
    Krapek, V.
    Humlicek, J.
    PHYSICAL REVIEW B, 2015, 92 (24):
  • [28] Recombination dynamics in CdTe/CdSe type-II quantum dots
    Wang, Chun Hsiung
    Chen, Tzung Te
    Chen, Yang Fang
    Ho, Mei Lin
    Lai, Chih Wei
    Chou, Pi Tai
    NANOTECHNOLOGY, 2008, 19 (11)
  • [29] Carrier dynamics in type-II GaSb/GaAs quantum dots
    Hatami, F
    Grundmann, M
    Ledentsov, NN
    Heinrichsdorff, F
    Heitz, R
    Bohrer, J
    Bimberg, D
    Ruvimov, SS
    Werner, P
    Ustinov, VM
    Kop'ev, PS
    Alferov, ZI
    PHYSICAL REVIEW B, 1998, 57 (08): : 4635 - 4641
  • [30] Interface engineering in type-II CdSe/BeTe quantum dots
    Ivanov, SV
    Shubina, TV
    Sorokin, SV
    Toropov, AA
    Kyutt, RN
    Sitnikova, AA
    Willander, M
    Waag, A
    Landwehr, G
    CURRENT ISSUES IN HETEROEPITAXIAL GROWTH-STRESS RELAXATION AND SELF ASSEMBLY, 2002, 696 : 189 - 194
12345