Nonparabolic conduction subbands in InGaAs/InAlAs multi-quantum wells with photocurrent and transmission measurement

被引：0
|
作者：
Tanaka, K [1 ]
Ueki, Y [1 ]
Shibata, K [1 ]
Kotera, N [1 ]
Washima, M [1 ]
Nakamura, H [1 ]
Mishima, T [1 ]
机构：
[1] Hiroshima City Univ, Dept Comp Engn, Hiroshima 7313194, Japan
来源：
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICIPRM.2001.929126
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical interband transitions of p-i-n and modulation-doped In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells structures were clearly observed in photocurrent and transmission spetra. Steps of the transitions coincided between both spectra. Effective masses of conduction subbands were estimated in fitting the transition energies to an effective mass equation. The masses of modulation-doped multi-quantum wells agreed with undoped multi-quantum wells in p-i-n junctions. In normal to the quantum well plane, the effective mass was more 75%-heavier than the bulk bandedge mass of InGaAs at a top of the quantum wells.
引用
收藏
页码：334 / 337
页数：4
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