III-V Compound Semiconductor Nanowires

被引：0

作者：

Paiman, S. ^{[1
]}

Joyce, H. J. ^{[1
]}

Kang, J. H. ^{[1
]}

Gao, Q. ^{[1
]}

Tan, H. H. ^{[1
]}

Kim, Y. ^{[3
]}

Zhang, X. ^{[2
]}

Zou, J. ^{[2
]}

Jagadish, C. ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, GPO Box 4, Canberra, ACT 0200, Australia

[2] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia

[3] Dong A Univ, Dept Phys, Busan 604714, South Korea

来源：

2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2009年

基金：

澳大利亚研究理事会;

关键词：

GROWTH;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.

引用

页码：155 / +

页数：2

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