Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition

被引:261
|
作者
Poodt, Paul [1 ]
Cameron, David C. [2 ]
Dickey, Eric [3 ]
George, Steven M. [4 ,5 ]
Kuznetsov, Vladimir [6 ]
Parsons, Gregory N. [7 ]
Roozeboom, Fred [1 ,8 ]
Sundaram, Ganesh [9 ]
Vermeer, Ad [10 ]
机构
[1] TNO, NL-5600 HE Eindhoven, Netherlands
[2] Lappeenranta Univ Technol, Adv Surface Technol Res Lab ASTRaL, FI-50100 Mikkeli, Finland
[3] Lotus Appl Technol, Hillsboro, OR 97006 USA
[4] Univ Colorado, Dept Chem, Boulder, CO 80309 USA
[5] Univ Colorado, Dept Chem Engn, Boulder, CO 80309 USA
[6] Levitech BV, NL-1322 AP Almere, Netherlands
[7] N Carolina State Univ, Dept Chem & Biomol Engn, Raleigh, NC 27695 USA
[8] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands
[9] Cambridge NanoTech Inc, Cambridge, MA 02139 USA
[10] SoLayTec BV, NL-5652 AM Eindhoven, Netherlands
来源
关键词
TRANSISTORS; FIBERS;
D O I
10.1116/1.3670745
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Atomic layer deposition (ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback of ALD is its low deposition rate, making ALD less attractive for applications that require high throughput processing. An approach to overcome this drawback is spatial ALD, i.e., an ALD mode where the half-reactions are separated spatially instead of through the use of purge steps. This allows for high deposition rate and high throughput ALD without compromising the typical ALD assets. This paper gives a perspective of past and current developments in spatial ALD. The technology is discussed and the main players are identified. Furthermore, this overview highlights current as well as new applications for spatial ALD, with a focus on photovoltaics and flexible electronics. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3670745]
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页数:11
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