Potential design and transport property of 0.1-mu m MOSFET with asymmetric channel profile

This paper describes potential design and transport property of a 0.1-mu m n-MOSFET with asymmetric channel profile, which is formed by the tilt-angle ion-implantation after gate electrode formation, The relation between device performance and transport property of the asymmetric 0.1-mu m device is explored by Monte Carlo simulations and measured electrical characteristics. The self-consistent Monte Carlo device simulation coupled with a process simulator reveals higher electron velocity at the source end of the channel and velocity overshoot at the source side of the channel, and the smaller high-energy tail of the distribution in the drain, This transport property creates high drain current, large transconductance, and low substrate current of the 0.1-mu m n-MOSFET with asymmetric channel profile.