Source/drain ion implantation into ultra-thin-single-crystalline-silicon-layer of separation by IMplanted OXygen (SIMOX) wafers

被引：4

作者：

Takahashi, M ^{[1
]}

Sakakibara, Y ^{[1
]}

Nakata, J ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 10期

关键词：

SIMOX; implantation; recrystallization; TRIM; amorphous; pile up;

D O I：

10.1143/JJAP.35.5237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Problems associated with ion implantation into ultra-thin-film SIMOX (Separation by IMplanted OXygen) of SOI (silicon on insulator) structures are discussed. We realized n-type source/drain region with lower resistance by P+ ion implantation. To decrease the resistance of the implanted layer, the amorphized high-dose layer must be recrystallized by annealing. We show that the possibility of recrystallization can be predicted by TRIM simulation. Moreover, it was found that excess phosphorus above the solid solubility segregates in the Si/SiO2 interface.

引用

页码：5237 / 5241

页数：5

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