Ultrafast Dynamics of Defect-Assisted Auger Process in PdSe2Films:Synergistic Interaction between Defect Trapping and Auger Effect

被引：19

作者：

Li, Di ^{[1
]}

Zhang, Wenjie ^{[1
]}

Suo, Peng ^{[1
]}

Chen, Jiaming ^{[1
]}

Sun, Kaiwen ^{[1
]}

Zou, Yuqing ^{[1
]}

Ma, Hong ^{[2
]}

Lin, Xian ^{[1
]}

Yan, Xiaona ^{[1
]}

Zhang, Saifeng ^{[1
]}

Li, Bo ^{[3
]}

Ma, Guohong ^{[1
]}

机构：

[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China

[2] Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China

[3] East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2022年 / 13卷 / 12期

基金：

中国国家自然科学基金;

关键词：

RECOMBINATION; ANNIHILATION;

D O I：

10.1021/acs.jpclett.2c00315

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By using optical pump and terahertz probe spectroscopy, we have investigated thephotocarrier dynamics in PdSe2films with different thicknesses. The experimental results revealthat the photocarrier relaxation consists of two components: a fast component of 2.5 ps thatshows the layer-thickness independence and a slow component that has typical lifetime of 7.3 psdecreasing with the layer thickness. Interestingly, the relaxation times for both fast and slowcomponents exhibited both pumpfluence and temperature independence, which suggests thatsynergistic interactions between defect trapping and Auger effect dominate the photocarrierdynamics in PdSe2films. A model involving a defect-assisted Auger process is proposed, whichcan reproduce the experimental results well. Thefitting results reveal that the layer-dependentlifetime is determined by the defect density rather than carrier occupancy rate afterphotoexcitation. Our results underscore the interplay between the Auger process and defectsin two-dimensional semiconductors.

引用

页码：2757 / 2764

页数：8

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