Low noise and high photodetection probability SPAD in 180 nm standard CMOS technology

被引：11

作者：

Accarino, Claudio ^{[1
]}

Al-Rawhani, Mohammed ^{[1
]}

Shah, Yash Diptesh ^{[1
]}

Maneuski, Dzmitry ^{[1
]}

Mitra, Srinjoy ^{[1
]}

Buttar, Craig ^{[1
]}

Cumming, David R. S. ^{[1
]}

机构：

[1] Univ Glasgow, Coll Sci & Engn, Glasgow, Lanark, Scotland

来源：

2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2018年

基金：

英国工程与自然科学研究理事会;

关键词：

single photon avalanche diode; SPAD; CMOS; low-light (vision); photo detector; image sensor; PHOTON AVALANCHE-DIODE;

D O I：

10.1109/ISCAS.2018.8351173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A square shaped, low noise and high photo-response single photon avalanche diode suitable for circuit integration, implemented in a standard CMOS 180 nm high voltage technology, is presented. In this work, a p+ to shallow n-well junction was engineered with a very smooth electric field profile guard ring to attain a photo detection probability peak higher than 50% with a median dark count rate lower than 2 Hz/mu m(2) when operated at an excess bias of 4 V. The reported timing jitter full width at half maximum is below 300 ps for 640 nm laser pulses.

引用

页数：4

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