Nanometric cutting of single crystal silicon surfaces modified by ion implantation

被引：114

作者：

Fang, F. Z. ^{[1
]}

Chen, Y. H. ^{[1
]}

Zhang, X. D. ^{[1
]}

Hu, X. T. ^{[1
]}

Zhang, G. X. ^{[1
]}

机构：

[1] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrume, Ctr MicroNano Mfg Technol, Tianjin 300072, Peoples R China

来源：

CIRP ANNALS-MANUFACTURING TECHNOLOGY | 2011年 / 60卷 / 01期

关键词：

Cutting; Silicon; Ion implantation; DEFORMATION;

D O I：

10.1016/j.cirp.2011.03.057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel method of ion implantation surface modification for cutting single crystal silicon is proposed. This method modifies the mechanical properties of the material's surface layer, which provides a possibility to reduce surface fractures, prolong tool life and increase the machining efficiency during the cutting process. The mechanism of both implantation surface modification and nanometric cutting is studied using transmission electron microscopy, Raman spectroscopy, nano-indentation and molecular dynamics simulation. Experiments including taper cutting, face turning and aspheric surface generation are conducted to verify the method. The results prove that the method is viable to fabricate complex silicon surface geometry and prolong tool life. (C) 2011 CIRP.

引用

页码：527 / 530

页数：4

共 10 条

[1] Surfaces in precision engineering, microengineering and nanotechnology [J].