Noise measurements in Mg-doped GaN

被引：0

作者：

Seghier, D ^{[1
]}

Gislason, HP ^{[1
]}

机构：

[1] Univ Iceland, Inst Sci, IS-107 Reykjavik, Iceland

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigated p-type epitaxial GaN:Mg materials using low frequency noise spectroscopy. The noise signal consists of a 1/f tail along with a generation-recombination contribution. In this paper we focus on the 1/f noise, the origin of which is incompletely understood. High values of the Hooge parameter in our samples indicate an inhomogeneous defect concentration.

引用

页码：229 / 230

页数：2

共 6 条

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[6] Correlation between deep levels and the persistent photoconductivity in Mg-doped GaN grown MOCVD
Seghier, D
Gislason, HP
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (04) : 291 - 294

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