Significant spin polarization of Co2MnGa Heusler thin films on MgO(100) measured by ultraviolet photoemission spectroscopy

被引：16

作者：

Hahn, Michaela ^{[1
]}

Schoenhense, Gerd ^{[1
]}

Jorge, Elena Arbelo ^{[1
]}

Jourdan, Martin ^{[1
]}

机构：

[1] Johannes Gutenberg Univ Mainz, Inst Phys, D-55128 Mainz, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 23期

关键词：

ELECTRONIC-STRUCTURE; SURFACE; ALLOYS;

D O I：

10.1063/1.3597315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spin dependent valence band structure of the Heusler compound Co2MnGa grown on MgO(100) is investigated by spin resolved ultraviolet photoemission spectroscopy (SRUPS). Using a vacuum suitcase, epitaxial thin film samples are transferred from a deposition chamber into an SRUPS chamber with a highly efficient spin detector. The transport results only in weak oxidation of the moderately reactive compound Co2MnGa. A spin polarization of 34% is obtained at the Fermi energy. The energy dependence of the spin polarization including a sign change at E-E-F=-0.6 eV is in good agreement with theoretical predictions of the bulk properties of the Heusler compound. (c) 2011 American Institute of Physics. [doi:10.1063/1.3597315]

引用

页数：3

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