INVESTIGATION OF ZrGe SCHOTTKY SOURCE/DRAIN ON n-Ge SUBSTRATES

Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates by using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. By using ZrGe as S/D, the operation of Schottky Ge p-channel MOSFET was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.