INVESTIGATION OF ZrGe SCHOTTKY SOURCE/DRAIN ON n-Ge SUBSTRATES

被引：0

作者：

Yang, Haigui ^{[1
]}

Gao, Jinsong ^{[1
]}

Nakashima, Hiroshi ^{[2
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Opt Syst Adv Mfg Technol, Changchun 130033, Peoples R China

[2] Kyushu Univ, Art Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

GERMANIUM; MOSFETS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zirconium germanide (ZrGe) Schottky source/drain (S/D) contacts were fabricated on n-Ge substrates by using direct sputter deposition of Zr. The electrical properties of ZrGe/n-Ge contact were investigated and an excellent Schottky characteristic with an electron barrier height of 0.59 eV was obtained, implying an extremely low hole barrier height of 0.07 eV. By using ZrGe as S/D, the operation of Schottky Ge p-channel MOSFET was well demonstrated without any S/D impurity doping. Its good performance indicates that ZrGe is available to S/D in Schottky Ge p-MOSFET.

引用

页数：3

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