Light extraction efficiency enhancement of GaN blue LED by liquid-phase-deposited ZnO rods

被引：39

作者：

Lee, Ming-Kwei ^{[1
]}

Ho, Chen-Lin ^{[1
]}

Chen, Po-Chun ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 1-4期

关键词：

GaN light-emitting diode (LED); light extraction efficiency; liquid phase deposition (LPD); ZnO;

D O I：

10.1109/LPT.2007.913652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the light extraction efficiency of a GaN light-emitting diode (LED) by using liquid-phase-deposited ZnO rods at near-room temperature. Zinc nitrate and hexamethylenetetramine were used as the deposition precursors. Compared with the conventional GaN LED, the optical power output of the GaN LED with crystalline ZnO rods on its surface has about 1.6 times enhancement.

引用

页码：252 / 254

页数：3

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