Observation of misfit dislocations at the InxGa1-xAs/GaAs interface by ballistic-electron-emission microscopy

被引：18
作者：
Lee, EY
Bhargava, S
Chin, MA
Narayanamura, V
Pond, KJ
Luo, K
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
[2] UNIV CALIF SANTA BARBARA,DEPT MECH ENGN,SANTA BARBARA,CA 93106
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 07期
关键词：
D O I：
10.1063/1.116950
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report ballistic-electron-emission microscopy (BEEM) imaging and spatially resolved spectroscopy of InxGa1-xAs/GaAs misfit dislocations 800 Angstrom below the surface. Majority-carrier scattering by a fraction of misfit dislocations was seen to locally reduce the BEEM current and to give logarithmic spatial dependence, which suggests charging of the dislocation cores. (C) 1996 American Institute of Physics.
引用
收藏
页码：940 / 942
页数：3
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