Rapid crystallization of SiO2/Sb80Te20 nanocomposite multilayer films for phase-change memory applications

被引：31
作者：
Wang, Changzhou [1 ]
Li, Simian [2 ]
Zhai, Jiwei [1 ]
Shen, Bo [1 ]
Sun, Mingcheng [1 ]
Lai, Tianshu [2 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
[2] Sun Yat Sen Univ, Dept Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
SCRIPTA MATERIALIA | 2011年 / 64卷 / 07期
关键词：
Nanocomposite; Multilayer films; Crystallization; Optical reflectivity; SB-TE FILMS;
D O I：
10.1016/j.scriptamat.2010.12.010
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The crystallization temperatures of SiO2/Sb80Te20 nanocomposite multilayer films can be modulated by varying the layer thicknesses of SiO2 and Sb80Te20. The reversible phase transition between amorphous and crystalline states can be achieved by using picosecond laser pulses with different fluences. Compared with conventional Ge2Sb2Te5, SiO2/Sb80Te20 multilayer films possess a faster crystallization speed. The existence of a periodic multilayer structure was confirmed by X-ray reflectivity and transmission electron microscopy characterizations. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：645 / 648
页数：4
相关论文
共 21 条
  • [1] Crystallization kinetics of Ga-Sb-Te films for phase change memory
    Cheng, Huai-Yu
    Kao, Kin-Fu
    Lee, Chain-Ming
    Chin, Tsung-Shune
    [J]. THIN SOLID FILMS, 2008, 516 (16) : 5513 - 5517
  • [2] Characteristics of Ga-Sb-Te films for phase-change memory
    Cheng, Huai-Yu
    Kao, Kin-Fu
    Lee, Chain-Ming
    Chin, Tsung-Shune
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 2007, 43 (02) : 927 - 929
  • [3] Phase change random access memory cell with superlattice-like structure
    Chong, TC
    Shi, LP
    Zhao, R
    Tan, PK
    Li, JM
    Lee, HK
    Miao, XS
    Du, AY
    Tung, CH
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (12)
  • [4] Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition
    Fujii, Tomoaki
    Kobayashi, Atsushi
    Shimomoto, Kazuma
    Ohta, Jitsuo
    Oshima, Masaharu
    Fujioka, Hiroshi
    [J]. APPLIED PHYSICS EXPRESS, 2010, 3 (02)
  • [5] Electrothermal dynamic in Si-doped Sb70Te30 recording films and two-dimensional thermal simulation of phase-change random access memory
    Hsu, Y. -S.
    Her, Y. -C.
    Cheng, S. -T.
    Tsai, S. -Y.
    [J]. SCRIPTA MATERIALIA, 2008, 58 (08) : 627 - 630
  • [6] Low programming input, direct overwrite and synchronous phase-change random access memory (SPRAM)
    Hsu, Yung-Sung
    Her, Yung-Chiun
    [J]. SCRIPTA MATERIALIA, 2009, 61 (12) : 1129 - 1132
  • [7] Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences
    Huang, Huan
    Zuo, Fangyuan
    Zhai, Fengxiao
    Wang, Yang
    Lai, Tianshu
    Wu, Yiqun
    Gan, Fuxi
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)
  • [8] Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses
    Ielmini, Daniele
    Zhang, Yuegang
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (19)
  • [9] Tungsten added Sb80Te20 for phase-change RAM
    Kao, Kin-Fu
    Cheng, Huai-Yu
    Jong, Chao-An
    Lan, Chi-Jui
    Chin, Tsung-Shune
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 2007, 43 (02) : 930 - 932
  • [10] Low-cost and nanoscale non-volatile memory concept for future silicon chips
    Lankhorst, MHR
    Ketelaars, BWSMM
    Wolters, RAM
    [J]. NATURE MATERIALS, 2005, 4 (04) : 347 - 352
123