Rapid crystallization of SiO2/Sb80Te20 nanocomposite multilayer films for phase-change memory applications

被引：33

作者：

Wang, Changzhou ^{[1
]}

Li, Simian ^{[2
]}

Zhai, Jiwei ^{[1
]}

Shen, Bo ^{[1
]}

Sun, Mingcheng ^{[1
]}

Lai, Tianshu ^{[2
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

[2] Sun Yat Sen Univ, Dept Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

SCRIPTA MATERIALIA | 2011年 / 64卷 / 07期

关键词：

Nanocomposite; Multilayer films; Crystallization; Optical reflectivity; SB-TE FILMS;

D O I：

10.1016/j.scriptamat.2010.12.010

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The crystallization temperatures of SiO2/Sb80Te20 nanocomposite multilayer films can be modulated by varying the layer thicknesses of SiO2 and Sb80Te20. The reversible phase transition between amorphous and crystalline states can be achieved by using picosecond laser pulses with different fluences. Compared with conventional Ge2Sb2Te5, SiO2/Sb80Te20 multilayer films possess a faster crystallization speed. The existence of a periodic multilayer structure was confirmed by X-ray reflectivity and transmission electron microscopy characterizations. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：645 / 648

页数：4

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