Recent trends in graphene materials synthesized by CVD with various carbon precursors

被引:47
作者
Kairi, Muhammad Izhar [1 ]
Khavarian, Mehrnoush [1 ]
Abu Bakar, Suriani [2 ]
Vigolo, Brigitte [3 ]
Mohamed, Abdul Rahman [1 ]
机构
[1] Univ Sains Malaysia, Sch Chem Engn, Engn Campus, Perai 14300, Pulau Pinang, Malaysia
[2] Univ Pendidikan Sultan Idris, Fac Sci & Math, Nanotechnol Res Ctr, Tanjung Malim 35900, Perak, Malaysia
[3] Univ Lorraine, Inst Jean Lamour, CNRS, BP 70239, F-54506 Vandoeuvre Les Nancy, France
关键词
CHEMICAL-VAPOR-DEPOSITION; FEW-LAYER GRAPHENE; LOW-TEMPERATURE GROWTH; WASTE CHICKEN FAT; LARGE-AREA; MONOLAYER GRAPHENE; BILAYER GRAPHENE; HIGH-QUALITY; ELECTROCHEMICAL EXFOLIATION; FUNCTIONALIZED GRAPHENE;
D O I
10.1007/s10853-017-1694-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Graphene is a single layer of carbon atoms arranged in an sp(2)-hybridized structure with properties far superior compared to other materials. Research and development in graphene synthesis have been rapidly growing the past few years, especially using chemical vapor deposition (CVD) over various types of carbon precursor. The nature and the type of carbon precursor is one important parameter of growth by CVD, especially for graphene production, since they can dramatically impact graphene growth yield and rate. However, effects of the used carbon precursor on graphene growth mechanisms are rarely discussed. In the course of large-scale and low-cost graphene preparation, this review on the recent trends regarding the utilization of diverse carbon precursors used to synthesize graphene via the CVD method is of great interest for development of improved or alternative synthesis methods. The details and the mechanisms involved in graphene synthesis using carbon precursors in the form of gaseous, liquids and solids are compared, analyzed and discussed thoroughly. In this review, we present a thorough overview on the impact and mechanisms of carbon precursors in achieving high-quality graphene with competitive edge in the near future.
引用
收藏
页码:851 / 879
页数:29
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