Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology

被引：0

作者：

Palianysamy, Moganraj ^{[1
]}

Sauli, Zaliman ^{[1
]}

Hashim, Uda ^{[2
]}

Retnasamy, Vithyacharan ^{[1
]}

Taniselass, Steven ^{[1
]}

Ayub, Ramzan Mat ^{[2
]}

机构：

[1] Univ Malaysia Perlis, Sch Microelect Engn, Kampus Pauh Putra, Arau 02600, Perlis, Malaysia

[2] Univ Malaysia Perlis, Inst Nano Elect Engn INEE, Seriab Kangar 01000, Perlis, Malaysia

来源：

MICRO/NANO SCIENCE AND ENGINEERING | 2014年 / 925卷

关键词：

RIE; DOE; DESIGNED EXPERIMENTS;

D O I：

10.4028/www.scientific.net/AMR.925.84

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Reactive Ion Etching (RIE) is an important process in fabrication of semiconductor devices. Design Of Experiment(DOE) has been used to study the effect of Reactive Ion Etch(RIE) towards surface morphology of aluminum bond pad. Important RIE factors involved in this experimental study are ratio of Tetrafluoromethane (CF4), Argon gas flow, BIAS, and ICP power. Different combinations of these factors produces different results of surface morphologies which was obtained using Atomic Force Microscopic(AFM). Produced results shows that overall surface roughness of the pad is affected by RIE and DOE offers a better way to optimize the desired outcome.

引用

页码：84 / +

页数：2

共 10 条

[1] Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology
Palianysamy, Moganraj
Sauli, Zaliman
Hashim, Uda
Retnasamy, Vithyacharan
Taniselass, Steven
Ayub, Ramzan Mat
MICRO/NANO SCIENCE AND ENGINEERING, 2014, 925 : 140 - +
[2] CHARACTERISTICS OF ETCH RATE UNIFORMITY IN ALUMINUM REACTIVE ION ETCHING
TSUKADA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11A): : 2956 - 2964
[3] ELECTRODE TEMPERATURE EFFECT IN NARROW-GAP REACTIVE ION ETCHING
TSUKADA, T
MASHIRO, S
MASHIMO, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10): : 4850 - 4853
[4] Surface modelling of reactive ion etching of silicon-germanium alloys in a SF6 plasma
Peignon, MC
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Boswell, RW
SURFACE & COATINGS TECHNOLOGY, 1997, 97 (1-3): : 465 - 468
[5] Topography simulation of reactive ion etching combined with plasma simulation, sheath model, and surface reaction model
Takagi, S
Iyanagi, K
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Shinmura, T
Fujino, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6A): : 3947 - 3954
[6] Effect of microstructure on reactive ion etching of sol-gel-derived PZT thin film
Peng, S
Xi, Y
CERAMICS INTERNATIONAL, 2004, 30 (07) : 1215 - 1218
[7] EFFECT OF GAS SPECIES ON THE DEPTH REDUCTION IN SILICON DEEP-SUBMICRON TRENCH REACTIVE ION ETCHING
SATO, M
KATO, S
ARITA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (07): : 1549 - 1555
[8] Investigation of Surface Roughness on Platinum Deposited Wafer After Reactive Ion Etching Using SF6+Argon Gaseous
Sauli, Zaliman
Retnasamy, Vithyacharan
Yeow, Aaron Koay Terr
Chui, Goh Siew
Anwar, K.
Abdullah, Nooraihan
MECHANICAL STRUCTURES AND SMART MATERIALS, 2014, 487 : 210 - +
[9] Glass surface modification by lithography-free reactive ion etching in an Ar/CF4-plasma for controlled diffuse optical scattering
Hein, Eric
Fox, Dennis
Fouckhardt, Henning
SURFACE & COATINGS TECHNOLOGY, 2011, 205 : S419 - S424
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SAITO, H
KONDO, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (4A): : L599 - L601

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