A general noise and S-parameter deembedding procedure for on-wafer high-frequency noise measurements of MOSFETs

被引：95

作者：

Chen, CH ^{[1
]}

Deen, MJ ^{[1
]}

机构：

[1] McMaster Univ, Hamilton, ON L8S 4K1, Canada

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 05期

关键词：

high-frequency noise; noise deembedding; scattering parameters; S-parameter deembedding;

D O I：

10.1109/22.920164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A general deembedding procedure using one "OPEN" and two "THRU" dummy structures fur noise and scattering parameter deembedding based on cascade configurations is presented in this paper, This technique does not require any equivalent-circuit modeling of probe pads or interconnections. This deembedding procedure is valid for designs having interconnections with any kinds of geometries and for devices operated at frequencies of several tens of gigahertz.

引用

页码：1004 / 1005

页数：2

共 6 条

[1]

[Anonymous], IEEE BCTM

[2]

Biber CE, 1998, IEEE MTT S INT MICR, P145, DOI 10.1109/MWSYM.1998.689343

[3] High frequency noise of MOSFETs - I - Modeling [J].