Percolation Induced Metal-Insulator Transition in 2D Si/SiGe Quantum Wells

被引：4

作者：

Dlimi, S. ^{[1
]}

El Kaaouachi, A. ^{[1
]}

Limouny, L. ^{[2
]}

Narjis, A. ^{[3
]}

机构：

[1] Univ Ibn Zohr, Fac Sci, Phys Dept, BP 8106, Agadir 80000, Morocco

[2] Univ Moulay Ismail, Fac Sci & Tech, Phys Dept, Boutalamine BP 509, Errachidia 52000, Morocco

[3] Cadi Ayyad Univ, Fac Sci Semlalia, Phys Dept, Nanomat Energy & Environm Lab LN2E,Ex LPSCM, POB 2390, Marrakech 40000, Morocco

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2022年 / 23卷 / 05期

关键词：

Si; SiGe quantum wells; 2D metal-insulating transition; Percolation type; Carrier density inhomogeneity; Disorder screening; P-GAAS; TRANSPORT; CONDUCTIVITY; TEMPERATURE; SYSTEMS; GAS;

D O I：

10.1007/s42341-021-00364-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Since the first observations metallic behavior in Si-MOSFETs (Silicon-Metal Oxide Semiconductor Field Effect Transistor), the nature of the metal insulator transition in two-dimensional (2D) systems has remained a controversial issue and the temperature coefficient of conductivity (TCC = d sigma/dT) can give a false conception on the critical density of the transition from a metallic side to an insulating side (or vice versa). In this paper the density (p) dependence of the conductivity of 2D hole gas confined in gated Si/SiGe/Si quantum wells was analyzed in the metallic side (p >= 1.610(11) cm(-2)) at very low temperature. Our investigation reveals a density inhomogeneity driven percolation-type transition and gives values of the critical densities lower than those indicated by the sign of the slope d sigma/dT.

引用

页码：457 / 461

页数：5

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