InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

被引：56

作者：

Memisevic, Elvedin ^{[1
]}

Svensson, Johannes ^{[1
]}

Lind, Erik ^{[1
]}

Wernersson, Lars-Erik ^{[1
]}

机构：

[1] Lund Univ, Dept Elect & Informat Technol, S-22100 Lund, Sweden

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 11期

基金：

瑞典研究理事会;

关键词：

III-V; InAs-InGaAsSb-GaSb; nanowire; transistor; tunnel field-effect transistor (TFET);

D O I：

10.1109/TED.2017.2750763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tunnel field-effect transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at VDS = 0.1 V) are characterized in this paper. Based on 88 devices, the impact of the low subthreshold swing on the overall performance is studied. Furthermore, correlation between parameters that are important for device characterization is determined.

引用

页码：4746 / 4751

页数：6

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