Corner effect in multiple-gate SOI MOSFETs

被引：0

作者：

Xiong, W ^{[1
]}

Park, JW ^{[1
]}

Colinge, JP ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Separate formation of channels in,corners and sides of triple-gate SOI MOSFETs is observed. This phenomenon degrades the I-on/I-off ratio and the subthreshold slope, but it is present only if high doping concentrations and corners with a small radius of curvature are used.

引用

页码：111 / 113

页数：3

共 6 条

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