GeSe thin-film solar cells

被引:91
作者
Liu, Shun-Chang [1 ,2 ]
Yang, Yusi [1 ]
Li, Zongbao [3 ,4 ]
Xue, Ding-Jiang [1 ,2 ]
Hu, Jin-Song [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Chem, CAS Key Lab Mol Nanostruct & Nanotechnol, BNLMS, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Tongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China
[4] Zhengzhou Univ, Natl Engn Res Ctr Adv Polymer Proc Technol, Zhengzhou 450002, Henan, Peoples R China
基金
中国国家自然科学基金;
关键词
ELECTRICAL-PROPERTIES; PHOTORESPONSE PROPERTIES; SB2SE3; PERFORMANCE; EFFICIENCY; SNSE; TRANSFORMATION; PHOTOVOLTAICS; TECHNOLOGY; MICROMETER;
D O I
10.1039/c9qm00727j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Thin-film solar cells made from non-toxic and earth-abundant materials are needed to substitute the current best-developed absorbers such as cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) due to the toxicity of Cd and scarcity of In and Te. In this aspect, germanium monoselenide (GeSe) satisfies the aforementioned criteria and has recently emerged as a potential replacement. Moreover, GeSe possesses a suitable bandgap of 1.14 eV (optimal for single junction solar cells), high absorption coefficient (>10(5) cm(-1)) at a wavelength close to the absorption onset, high hole mobility (128.6 cm(2) V-1 s(-1)), and simple binary composition with fixed orthorhombic phase at room temperature. This review introduces the properties of GeSe with special emphasis on the material, optical and electrical properties, and then summarizes the recent progress of GeSe-based solar cells. Finally, we give guidance on optimizing GeSe thin-film solar cells to their full performance potential, and provide a brief outlook for the further development of GeSe thin-film solar cells.
引用
收藏
页码:775 / 787
页数:13
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