Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With Al+ Ions

被引：13

作者：

Lulli, Giorgio ^{[1
]}

机构：

[1] CNR, Ist Microelettron & Microsistemi, Sez Bologna, I-40129 Bologna, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 01期

关键词：

Channeling; doping; ion implantation; Monte Carlo (MC) simulation; silicon carbide (SiC); MONTE-CARLO-SIMULATION; SILICON-CARBIDE; IMPLANTATIONS; CRYSTALS; BMFET; POWER;

D O I：

10.1109/TED.2010.2086062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lateral undermask penetration of Al+ ions implanted in 4H-SiC is investigated by computer simulation based on Monte Carlo binary collision approximation. Results show that a small fraction of ions, implanted normal to a (0001) 4H-SiC wafer miscut of 8 degrees toward the {11 (2) over bar0}, is scattered and become channeled in all the < 11 (2) over bar0 > directions perpendicular to the < 0001 > axis, traveling long distances along these directions. Due to this phenomenon, channeling tails in ion distributions, with concentration <= 10(-4) of the peak value, can extend laterally for a few micrometers below the edge of a SiO2 mask.

引用

页码：190 / 194

页数：5

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