High power silicon RF LDMOSFET technology for 2.1GHz power amplifier applications

被引：13

作者：

Xu, SM ^{[1
]}

Baiocchi, F ^{[1
]}

Safar, H ^{[1
]}

Lott, J ^{[1
]}

Shibib, A ^{[1
]}

Xie, ZJ ^{[1
]}

机构：

[1] Agere Syst, Allentown, PA 18109 USA

来源：

ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/ISPSD.2003.1225261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, RF LDMOSFET is demonstrated with excellent RF performance. It achieves high power gain of 14.5db with a high power of 130W at 2.1GHz. Its high efficiency and high linearity makes it to be highly desired by applications. 2mil substrate enables the best-in-class of thermal stability. Low HCI degradation, integrated ESD and gold metal ensure a good long-term reliability.

引用

页码：190 / 193

页数：4

共 5 条

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[3]

XU S, 1999, IEDM, P201

[4]

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[5]

YOSHIDA I, 1997, IEDM

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