High-resolution electron microscopy investigations on stacking faults in SrBi2Ta2O9 ferroelectric thin films

被引：12

作者：

Zhu, XH ^{[1
]}

Li, AD ^{[1
]}

Wu, D ^{[1
]}

Zhu, T ^{[1
]}

Liu, ZG ^{[1
]}

Ming, NB ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 07期

关键词：

D O I：

10.1063/1.1332106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural planar defects in the SrBi2Ta2O9 (SBT) films with 10 mol % excess Bi grown in Pt/TiO2/SiO2/Si substrates by metalorganic deposition have been observed by high-resolution electron microscopy. It was found that these stacking defects were planar defects with extra Bi-O planes normal to the c axis. These structural defects are expected to effectively improve the ferroelectric response and fatigue-resistance characteristics of SBT films because of the extra Bi-O planes having higher strucutral flexibility and alleviating the mechanical stresses and strains as well as injected-charge problems. (C) 2001 American Institute of Physics.

引用

页码：973 / 975

页数：3

共 16 条

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