Transport Properties of Cubic Cuprous Iodide Films Deposited by Successive Ionic Layer Adsorption and Reaction

被引：3

作者：

Klochko, N. P. ^{[1
]}

Klepikova, K. S. ^{[1
]}

Zhadan, D. O. ^{[1
]}

Kopach, V. R. ^{[1
]}

Kostyuchenko, Y. R. ^{[1
]}

Khrypunova, I., V ^{[1
]}

Lyubov, V. M. ^{[1
]}

Kirichenko, M., V ^{[1
]}

Khrypunova, A. L. ^{[1
]}

Petrushenko, S., I ^{[2
]}

Dukarov, S., V ^{[2
]}

机构：

[1] Natl Tech Univ, Mat Engn Solar Cells Dept MESC, Kharkiv Polytech Inst NTU KhPI, Kharkiv, Ukraine

[2] Kharkov Natl Univ, Sch Phys, Kharkiv, Ukraine

来源：

MICROSTRUCTURE AND PROPERTIES OF MICRO- AND NANOSCALE MATERIALS, FILMS, AND COATINGS (NAP 2019) | 2020年 / 240卷

关键词：

THIN-FILMS; CUI;

D O I：

10.1007/978-981-15-1742-6_3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work we investigate crystal structure, morphology, and composition of Cut films produced in different modes of SILAR on glass plates and on flexible poly(ethylene terephthalate) (PET) substrates in connection with their transport properties, and with electrical and thermoelectric properties as a whole. Temperature dependences of resistivity for most Cut films have the crossover from semiconducting to metallic behavior with increasing temperature. The semiconductor carrier transport occurs in Cut films through nearest neighboring hopping. Metallic transport in Cut films carried out in accordance with the ionized impurity scattering and the carrier-carrier scattering model.

引用

页码：19 / 30

页数：12

共 15 条

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