A Resonant Differential Pressure Sensor Based on Bulk Silicon Technology

被引：0
|
作者：
Cheng, Chao [1 ,2 ]
Li, Yadong [1 ,2 ]
Lu, Yulan [1 ,2 ]
Xiang, Chao [1 ,2 ]
Chen, Jian [1 ,2 ]
Wang, Junbo [1 ,2 ]
Chen, Deyong [1 ,2 ]
机构：
[1] Chinese Acad Sci, Aerosp Informat Res Inst, State Key Lab Transducer Technol, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
来源：
2021 IEEE 16TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2021年
基金：
国家重点研发计划;
关键词：
STRAIN-GAUGE;
D O I：
10.1109/NEMS51815.2021.9451493
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A resonant differential pressure sensor based on bulk silicon technology was put forward in this study. SOI-MEMS technology was employed to fabricate sensor die. A SOI wafer for differential pressure sensing and a GOS (glass on silicon) wafer as a cap were anodically bonded to achieve vacuum packaging for resonators. Finite element simulation was conducted, confirming that the intrinsic resonant frequencies of resonators changed with the variation of differential pressure linearly. Open-loop test results showed the resonators demonstrated a high-Q value of 22000, and differential pressure experiment results indicated that the sensitivity of sensor for differential pressure measurement was characterized as 52.75 Hz/kPa.
引用
收藏
页码：193 / 196
页数：4
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