HAXPES of GaN film on Si with Cr Kα photons

被引：2
|
作者：
Vanleenhove, Anja [1 ]
Zborowski, Charlotte [1 ]
Vaesen, Inge [1 ]
Hoflijk, Ilse [1 ]
Conard, Thierry [1 ]
机构：
[1] IMEC, MCACSA, Kapeldreef 75, B-3001 Leuven, Belgium
来源：
SURFACE SCIENCE SPECTRA | 2021年 / 28卷 / 01期
关键词：
GaN; HAXPES; Cr K alpha; ANGULAR-DISTRIBUTION PARAMETERS; ANALYTIC FITS;
D O I：
10.1116/6.0000888
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Gallium nitride (GaN) grown on Si by metalorganic chemical vapor deposition was analyzed using high-resolution, high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of GaN obtained using monochromatic Cr K alpha radiation at 5414.7 eV include a survey scan (Al K alpha) and high-resolution spectra of Ga 3d, Ga 2p(3/2), Ga 3p, Ga LMM, N Is, C Is, and O Is.
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页数：9
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