A high power density, 6W MMIC for Ku/K-band applications

被引:9
|
作者
Shimura, T [1 ]
Satoh, T [1 ]
Hasegawa, Y [1 ]
Fukaya, J [1 ]
机构
[1] Fujitsu Quantum Devices Ltd, Hachioji, Tokyo 1920046, Japan
关键词
D O I
10.1109/MWSYM.2003.1212503
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A Ku/K-Band very small size MMIC high power amplifier (HPA) providing 6W of CW output power, 23dB of gain and 30% power added efficiency for application in the Ku/K-Band is presented. It is produced on a low cost, commercially available 0.25um pHEMT process. This MMIC is composed of three stage pHEMT and chip size is 3.5 x 3.0 mm(2). The HPA achieved 570 mW output power per 1 mm2 die area. This value is the highest power density at Ku/K/Ka-Band reported to date.
引用
收藏
页码:851 / 854
页数:4
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