A high power density, 6W MMIC for Ku/K-band applications

被引：9
|
作者：
Shimura, T [1 ]
Satoh, T [1 ]
Hasegawa, Y [1 ]
Fukaya, J [1 ]
机构：
[1] Fujitsu Quantum Devices Ltd, Hachioji, Tokyo 1920046, Japan
来源：
2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年
关键词：
D O I：
10.1109/MWSYM.2003.1212503
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ku/K-Band very small size MMIC high power amplifier (HPA) providing 6W of CW output power, 23dB of gain and 30% power added efficiency for application in the Ku/K-Band is presented. It is produced on a low cost, commercially available 0.25um pHEMT process. This MMIC is composed of three stage pHEMT and chip size is 3.5 x 3.0 mm(2). The HPA achieved 570 mW output power per 1 mm2 die area. This value is the highest power density at Ku/K/Ka-Band reported to date.
引用
收藏
页码：851 / 854
页数：4
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