Three-photon absorption in InAs

被引：3

作者：

Hasselbeck, MP

Said, AA

van Stryland, EW

Sheik-Bahae, M

机构：

[1] USAF, Phillips Lab, Kirtland AFB, NM 87117 USA

[2] Univ Cent Florida, Creol, Orlando, FL 32816 USA

[3] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1998年 / 30卷 / 03期

关键词：

D O I：

10.1023/A:1006962228937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using 125 ps laser pulses, we observe three-photon absorption in room temperature InAs at a wavelength of 9.54 mu m. This effect is readily identified by temperature-tuning the semiconductor bandgap through the three-photon absorption edge. A three-photon absorption coefficient of K-3 = 1 +/- 0.6 x 10(-3) cm(3) MW-2 is extracted from non-linear absorption data obtained with an open-aperture Z-scan. Time-resolved measurement at high irradiance reveals an increase of absorption due to hot carriers. We also present an autocorrelation measurement of our CO2 laser pulse that shows two complete optical free-induction-decay cycles.

引用

页码：193 / 200

页数：8

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