Pull-In Dynamics of Two MEMS Parallel-Plate Structures for Acceleration Measurement

被引:16
|
作者
Ma, Zhipeng [1 ,2 ]
Jin, Xiaojun [1 ,2 ]
Guo, Yixuan [1 ,2 ]
Zhang, Tengfei [1 ,2 ]
Jin, Yiming [1 ,2 ]
Zheng, Xudong [1 ,2 ]
Jin, Zhonghe [1 ,2 ]
机构
[1] Zhejiang Univ, Microsatellite Res Ctr, Hangzhou 310007, Peoples R China
[2] Key Lab Micro Nanosatellite Res, Hangzhou 310007, Peoples R China
关键词
Damping; Mathematical model; Electrostatics; Micromechanical devices; Force; Sensors; Capacitors; Pull-in; MEMS parallel plate; acceleration measurement; INSTABILITY;
D O I
10.1109/JSEN.2021.3083784
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper investigates the pull-in dynamics of single-sided and double-sided parallel-plate (SSPP and DSPP) structures employed in MEMS devices for acceleration measurement. A lumped electromechanical model considering a variable damping coefficient and external acceleration is developed for studying their pull-in dynamical behavior. The critical pull-in displacement and pull-in voltage for both parallel-plate structures operated with external acceleration are derived based on the static and dynamical analysis of the proposed model, which are in good agreement with the experimental results. The derived closed-form solutions are shown to be capable of predicting the pull-in behavior of both parallel-plate structures in an overdamped system. Two MEMS parallel-plate structures exhibit distinct pull-in characteristics due to their distinct configurations. The commonly used SSPP structure for MEMS devices is shown to have a relatively linear response to the external acceleration in terms of the critical pull-in displacement and pull-in voltage. However, the DSPP structure exhibits much larger yet nonlinear sensitivity of both the critical pull-in displacement and the critical pull-in voltage to a small range of external acceleration, which has the potential of developing high-sensitivity accelerometers whenever the sensitivity nonlinearity is compensated. Moreover, the effects of pressure are characterized for both DSPP and SSPP devices, which affects the difference between the critical static and dynamic pull-in voltages. The SSPP structure is shown to have the critical pull-in voltage proportional to the logarithmic magnitude of the pressure, while that of the DSPP structure do not vary linearly with respect to the logarithmic magnitude of the pressure.
引用
收藏
页码:17686 / 17694
页数:9
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