Raman-spectroscopy study of PbTiO3 thin films grown on Si substrates by metalorganic chemical vapor deposition

被引：17

作者：

Ma, WH ^{[1
]}

Zhang, MS ^{[1
]}

Shun, L ^{[1
]}

Yin, Z ^{[1
]}

Chen, Q ^{[1
]}

Chen, YF ^{[1
]}

Ming, NB ^{[1
]}

机构：

[1] NANJING UNIV,CTR ADV STUDIES SCI & TECHNOL MICROSTRUCT,NANJING 210093,PEOPLES R CHINA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1996年 / 62卷 / 03期

关键词：

D O I：

10.1007/BF01575095

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman spectra have been investigated in PbTiO3 thin films grown on Si by metalorganic chemical vapor deposition. A large grazing-angle scattering technique was taken to measure the temperature dependence of Raman spectra below room temperature. All Raman modes in the thin films are assigned and compared with those in the bulk single crystal, a new A(1)(TO) soft mode at 104 cm(-1) was recorded which satisfies the Curie-Weiss relation omega(2) = A(T-c - T). Intensities of the A(1)(1TO) and E(1TO) modes were anomalously strengthened with increasing temperature. Raman modes for the thin films exhibit remarkable frequency downshift and upshift which is related to the effect of internal stress.

引用

页码：281 / 284

页数：4

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