High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions -: art. no. 032502

被引：51
作者：
Lu, HB [1 ]
Dai, SY
Chen, ZH
Zhou, YL
Cheng, BL
Jin, KJ
Liu, LF
Yang, GZ
Ma, XL
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 03期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.1850192
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Large positive magnetoresistance (MR) and high MR sensitivity in low magnetic fields have been discovered in the Sr-doped LaMnO3 and Nb-doped SrTiO3 p-n junctions fabricated by laser molecular-beam epitaxy. The MR ratios, defined as DeltaR/R-0, DeltaR = R-H-R-0, are observed as large as 11 % in 5 Oe, 23 % in 100 Oe, and 26 % in 1000 Oe at 290 K; 53% in 5 Oe, 80 % in 100 Oe, and 94 % in 1000 Oe at 255 K. The MR sensitivities are 85 Omega/Oe at 290 K, 246 Omega/Oe at 255 K, and 136 Omega/Oe at 190 K, respectively, with the applied magnetic field changed from 0 to 5 Oe. The positive MR ratios and high MR sensitivities of the p-n junctions are very different from that of the LaMnO3 compound family. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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