Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films

被引：61
作者：
Kar, J. P. [1 ]
Kim, S. [1 ]
Shin, B. [1 ]
Park, K. I. [2 ]
Ahn, K. J. [2 ]
Lee, W. [3 ]
Cho, J. H. [4 ]
Myoung, J. M. [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] SNTEK Co Ltd, Kimpo Shi 415843, Gyeonggi Do, South Korea
[3] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyoungnam, South Korea
[4] Univ Incheon, Dept Multimedia Syst Engn, Inchon 406772, South Korea
来源：
SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 11期
关键词：
ZnO; Thin film; Doping; Sputtering; Transparent conductive oxide; TRANSPARENT CONDUCTING OXIDE; THIN-FILMS; ZINC-OXIDE; SOLAR-CELL; TEMPERATURE; DEPOSITION; DC;
D O I：
10.1016/j.sse.2010.07.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Al-doped ZnO (AZO) films were deposited on glass substrates by pulsed DC sputtering technique with various working pressures in the range of 1-15 mTorr. A relationship between the morphological. mechanical and electrical properties of sputtered AZO films was studied as a function of sputtering pressure. The sputtered films were highly c-axis oriented. The n-type conductivity in AZO films was observed due to the substitutional doping of Al. AZO films deposited at 3 mTorr have shown an electrical resistivity of 2.2 x 10(-4) Omega cm and high transmittance in visible range with better mechanical properties. For higher sputtering pressures an increase in the resistivity was observed due to a decrease in the mobility and the carrier concentration. The lower sputtering pressure was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices. (C) 2010 Elsevier Ltd. All rights reserved.
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页码：1447 / 1450
页数：4
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