Challenges in Lift-Off Process Using CAMP Negative Photoresist in III-V IC Fabrication

被引：15

作者：

Berkoh, Daniel ^{[1
]}

Kulkarni, Sarang ^{[1
]}

机构：

[1] Skyworks Solut Inc, Proc Engn, Newbury Pk, CA 91320 USA

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2019年 / 32卷 / 04期

关键词：

Lift-off; CAMP; negative photoresist; nLOF; loading effect; retrograde profile; bulk effect;

D O I：

10.1109/TSM.2019.2944133

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In III-V IC processing, lift-off patterning is universally used. Historically used negative resist has its limitations; hence the image reverse process using positive tone resist has been utilized as the main work horse in lift-off applications. Metal lift-off processes using a specially designed chemically amplified (CAMP) negative tone resist have been evaluated for thin and thick metal layers to have a varying degree of success. Liftoff using CAMP photoresists has made it possible to reduce cycle time (similar to 57% reduction in 1x theoretical cycle time per layer) and reduce cost (due to elimination of steps) as compared to the image reverse process. However, achieving consistent lift-off and critical dimension (CD) control presents challenges, which are discussed in this paper.

引用

页码：513 / 517

页数：5

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