LACBED measurement of the chemical composition of a thin InxGa1-xAs layer buried in a GaAs matrix

被引：6

作者：

Jacob, D ^{[1
]}

Androussi, Y ^{[1
]}

Lefebvre, A ^{[1
]}

机构：

[1] Univ Sci & Technol Lille, CNRS, ESA 8008, Lab Struct & Proprietes Etat Solide, F-59655 Villeneuve Dascq, France

来源：

ULTRAMICROSCOPY | 2001年 / 89卷 / 04期

关键词：

LACBED; semiconductor quantum well; chemical composition;

D O I：

10.1016/S0304-3991(01)00091-2

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Large angle convergent beam electron diffraction (LACBED) observations are used to determine the x indium, content of a thin InxGa1-xAs quantum well buried in a GaAs matrix. The method consists in a quantitative analysis of the Bragg line intensities lying in the central disc of any LACBED pattern. This analysis makes it possible to determine the displacement vector R introduced, between the two parts of the GaAs matrix, by the deformation of the quantum well and consequently to determine the x indium content. This indium content is found to be consistent with the value expected from the molecular beam epitaxy growth conditions. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：299 / 303

页数：5

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