Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

被引：37

作者：

Kuang, Y. J. ^{[1
]}

Sukrittanon, S. ^{[2
]}

Li, H. ^{[3
]}

Tu, C. W. ^{[2
,3
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Univ Calif San Diego, Grad Program Mat Sci & Engn, La Jolla, CA 92093 USA

[3] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期

基金：

美国国家科学基金会;

关键词：

CORE-SHELL; BAND-GAP; GAN(X)P1-X ALLOYS; FILM GROWTH; HETEROSTRUCTURES; SILICON; GAAS;

D O I：

10.1063/1.3681172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from similar to 1 x 10(7) to similar to 5 x 10(8) cm(-2) across the substrate. Typical diameters are similar to 110 nm for GaP NWs and similar to 220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is similar to 0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681172]

引用

页数：3

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