Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

被引：37

作者：

Kuang, Y. J. ^{[1
]}

Sukrittanon, S. ^{[2
]}

Li, H. ^{[3
]}

Tu, C. W. ^{[2
,3
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Univ Calif San Diego, Grad Program Mat Sci & Engn, La Jolla, CA 92093 USA

[3] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期

基金：

美国国家科学基金会;

关键词：

CORE-SHELL; BAND-GAP; GAN(X)P1-X ALLOYS; FILM GROWTH; HETEROSTRUCTURES; SILICON; GAAS;

D O I：

10.1063/1.3681172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from similar to 1 x 10(7) to similar to 5 x 10(8) cm(-2) across the substrate. Typical diameters are similar to 110 nm for GaP NWs and similar to 220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is similar to 0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681172]

引用

页数：3

共 24 条

[11] Type-II quantum dots: CdTe/CdSe(core/shell) and CdSe/ZinTe(core/shell) heterostructures [J].

Kim, S ;

Fisher, B ;

Eisler, HJ ;

Bawendi, M .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (38) :11466-11467

[12] Nanorod heterostructures showing photoinduced charge separation [J].

Kumar, Sandeep ;

Jones, Marcus ;

Lo, Shun S. ;

Scholes, Gregory D. .

SMALL, 2007, 3 (09) :1633-1639

[13] Epitaxial core-shell and core-multishell nanowire heterostructures [J].

Lauhon, LJ ;

Gudiksen, MS ;

Wang, CL ;

Lieber, CM .

NATURE, 2002, 420 (6911) :57-61

[14] One-dimensional hole gas in germanium/silicon nanowire heterostructures [J].

Lu, W ;

Xiang, J ;

Timko, BP ;

Wu, Y ;

Lieber, CM .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (29) :10046-10051

[15] Epitaxial III-V nanowires on silicon [J].

Mårtensson, T ;

Svensson, CPT ;

Wacaser, BA ;

Larsson, MW ;

Seifert, W ;

Deppert, K ;

Gustafsson, A ;

Wallenberg, LR ;

Samuelson, L .

NANO LETTERS, 2004, 4 (10) :1987-1990

[16] GaP/GaAsP/GaP core-multishell nanowire heterostructures on (111) silicon [J].

Mohseni, P. K. ;

Maunders, C. ;

Botton, G. A. ;

LaPierre, R. R. .

NANOTECHNOLOGY, 2007, 18 (44)

[17] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ ;

NORTON, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8

[18] ELECTRICAL-PROPERTIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITED GAAS EPITAXIAL LAYERS - TEMPERATURE-DEPENDENCE [J].

REEP, DH ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) :2697-2702

[19] Nature of the fundamental band gap in GaNxP1-x alloys [J].

Shan, W ;

Walukiewicz, W ;

Yu, KM ;

Wu, J ;

Ager, JW ;

Haller, EE ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3251-3253

[20] Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires [J].

Sköld, N ;

Karlsson, LS ;

Larsson, MW ;

Pistol, ME ;

Seifert, W ;

Trägårdh, J ;

Samuelson, L .

NANO LETTERS, 2005, 5 (10) :1943-1947

← 1 2 3 →