Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

被引:37
作者
Kuang, Y. J. [1 ]
Sukrittanon, S. [2 ]
Li, H. [3 ]
Tu, C. W. [2 ,3 ]
机构
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Grad Program Mat Sci & Engn, La Jolla, CA 92093 USA
[3] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
基金
美国国家科学基金会;
关键词
CORE-SHELL; BAND-GAP; GAN(X)P1-X ALLOYS; FILM GROWTH; HETEROSTRUCTURES; SILICON; GAAS;
D O I
10.1063/1.3681172
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from similar to 1 x 10(7) to similar to 5 x 10(8) cm(-2) across the substrate. Typical diameters are similar to 110 nm for GaP NWs and similar to 220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is similar to 0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681172]
引用
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页数:3
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