Studying the Raman spectra of Ag doped ZnO films grown by PLD

被引：25
|
作者：
Wang, L. N. [1 ]
Hu, L. Z. [1 ]
Zhang, H. Q. [1 ]
Qiu, Y. [1 ]
Lang, Y. [1 ]
Liu, G. Q. [1 ]
Ji, J. Y. [1 ]
Ma, J. X. [1 ]
Zhao, Z. W. [1 ]
机构：
[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Micro Nano Technol & Syst Liaoning Prov, Dalian 116024, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2011年 / 14卷 / 3-4期
关键词：
ZnO:Ag films; Raman spectroscopy; Annealed; PLD; THIN-FILMS; OPTICAL-PROPERTIES; SCATTERING; GA; AL;
D O I：
10.1016/j.mssp.2011.05.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We prepared Ag doped zinc oxide (ZnO:Ag) films using pulsed laser deposition method and studied the Raman spectra of the unannealed and annealed films. The results indicate that the ZnO:Ag films could still retain their wurtzite structure: the A(1) (LO) mode resulting from oxygen vacancies and zinc interstitials was observed to be very strong in the Raman spectra. A local vibrational mode at 493 cm(-1) induced by Ag doping could also be clearly observed in the Raman spectra, which may be used as an indication of Ag incorporation into the ZnO lattice. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：274 / 277
页数：4
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